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CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=85C) Peak One Cycle Surge Current, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=20s Average Gate Power Dissipation Peak Gate Current, tp=20s Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature
SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IGM di/dt TJ Tstg
CSD-4M 600 4.0 30 4.5 3.0 0.2 1.2 50
CSD-4N 800
UNITS V A A A2s W W A A/s C C
-40 to +125 -40 to +150
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1K Rated VDRM, VRRM, RGK=1K, TC=125C VD=12V, RL=10 IT=50mA, RGK=1K VD=12V, RL=10 ITM=8.0A, tp=380s VD=2 /3 VDRM, RGK=1K, TC=125C 10
TYP
MAX 10 200
UNITS A A A mA V V V/s
20
38 0.25 0.55 1.6
200 2.0 0.8 1.8
R1 (12-February 2010)
CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER
R1 (12-February 2010)
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